Abstract: The CH film is widely used in the inertial confinement fusion experiment for its excellent properties especially for the plasma and X-ray diagnoses. There are many methods to produce the CH film, and different method will lead to different application in the target fabrication. The method of hot wire assistance chemical vapor deposition to produce the CH film can enhance the deposition rate and keep low substrate temperature. This paper focuses on the effects of the hotwire current on the deposition rate and the surface morphology of the CH film. Experiments show that the deposition rate increases and the film surface roughness increases when the current increases. Based on these experiments the film production mechanism is discussed.