γ射线辐照对a-SiC:H薄膜结构与特性的影响
Effect of γ rays irradiation on structure and property of a-SiC:H film
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摘要: 采用射频（13.56 MHz）反应溅射方法制备a-SiC:H 薄膜，并将其在空气中进行高能γ射线(平均为1.25 MeV)辐照，5个样品的吸收剂量分别为0，2×104，4×104，6×104，8×104 Gy。采用拉曼及红外光谱对薄膜的结构进行表征,得到了其结构与特性的变化规律。研究与分析表明：随样品吸收剂量的增加，陷入空穴中的电子会被激发，a-SiC:H薄膜中的SiC成份增加，电阻率变小，数量级为105Ω·cm；薄膜存在结晶化的趋势,其主要原因在于由Si－O－Si键断裂而产生的Si取代膜中C－C键中的C而形成晶态SiC，在此过程中出现了Si－O－Si键及a-SiC:H的减少，晶态SiC的增加。经γ射线辐照后薄膜的氢含量降低，折射率从5.19增大到5.53，辐照后薄膜的透过率均低于原膜的透过率。在500~2 300 cm-1(对应波长为20.00~5.29 μm)波段内，a-SiC:H薄膜存在一定的增透作用。
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关键词:
- a-SiC:H薄膜 /
- γ射线辐照 /
- Raman与IR光谱 /
- 结晶 /
- 红外透过率
Abstract: Amorphous hydrogenated silicon carbide(a-SiC:H) films were prepared by the reactive sputtering method, which were irradiated by high energy (average value is 1.25 MeV) γ rays. The absorbed dose of five samples were 0, 2×104, 4×104, 6×104, and 8×104 Gy respectively. Resistivity, Raman scattering and infrared transimissing spectroscopy were used to investigate the effects of γ rays irradiation on the structure and properties of a-SiC:H films. It is found that the increase of absorbed doses results in light crystallization in a-SiC:H films and the decrease in resistivity (the level is 105 Ω·cm). The main reason may be that Si which comes from the breakdown of Si�O�Si bonds takes the place of C of C�C bonds in the films, and brings out the increase of crystal SiC. The infrared-
Key words:
- a-sic:h films /
- γ rays irradiation /
- raman and ir spectrum /
- crystallization /
- infrared transmittance
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