X光CCD响应特性研究
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摘要: 在北京同步辐射源上建立了X光CCD(Charge-Coupled Device)量子效率实验标定方法,获得了150eV至1500eV能区范围多个X光能点的量子效率实验结果,发展了X光CCD量子效率简化计算模型,并对X光CCD表面油沾污对量子效率的影响进行了实验研究和修正。结果表明经过油沾污修正后的简化理论模型计算结果与实验标定结果符合较好。Abstract: Response of X-ray charge coupled device (CCD) to soft x rays were calibrated on Beijing Synchrotron Radiation Facility, and the experimental results have been obtained in photon energy range of 150eV to 1500eV. Then, a simple model was developed to simulate the calibrated results. The effect of CCD surface contamination on CCD response to x rays has also been investigated.
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Key words:
- x-ray ccd /
- quantum efficiency /
- experimental calibration
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