波段外激光辐照PC型探测器的反常响应机制
Abnormal responsive mechanism of photoconductive semiconductor detectors under off-band laser irradiation
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摘要: 提出了PC型半导体探测器对波段外激光辐照的热电子光电导响应机制。响应波段外激光辐照PC型半导体探测器时,探测器有响应且输出电压信号迅速增大,与波段内激光辐照时的响应规律截然不同,这是由光激发能带内热电子而引起的光电导现象。当较强功率的激光辐照时还应考虑热效应。依据该机制进行了模拟计算,计算结果表明当PC型HgCdTe探测器被波段外激光辐照时,热电子的产生使得电导率减小,进而导致探测器的电阻增大。Abstract: The abnormal responsive mechanism of photoconductive semiconductor detectors irradiated by off-band laser, hot electron photoconductivity, was proposed. The response of a photoconductive semiconductor detector under off-band laser irradiation is different from that under in-band laser irradiation. Heat effect in detectors was considered simultaneously under high power laser irradiation. The outputs of the detector were calculated accordingly. The calculated results show that the production of hot electrons causes the conductivity to decrease when a photoconductive HgCdTe detector is irradiated by off-band laser and that the resistance and the output of the detector are increased consequently.
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