强脉冲X射线辐照Si-SiO<sub>2</sub>界面对C-V 和I-V特性曲线的影响

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强脉冲X射线辐照Si-SiO₂界面对C-V 和I-V特性曲线的影响

1.
School of Science,Jinan University,Jinan 250022,China;
2.
Xinjiang Institute of Physics,the Chinese Academy of Sciences,Urumqi 830011 ,China;
3.
Department of Physics,Xinjiang University,Urumqi 830046,China;
4.
Northwest Institute of Nuclear Technology,Xi'an 710024,China;
5.
Telecommunication Engineering Institute of Air Force Engineering University,Xi'an 710077,China

摘要: 利用强脉冲X射线对Si-SiO2界面进行了辐照，测量了C-V曲线和I-V曲线。实验发现，经过强脉冲X射线对Si-SiO2界面进行的辐照，使C-V曲线产生了正向漂移，这一点与低剂量率辐射结果不同；辐射后，感生I-V曲线产生畸变；特别地，从I-V曲线上还反映出强脉冲X射线辐照的总剂量效应造成电特性参数明显退化，最后甚至失效。讨论了强脉冲X射线辐照对Si-SiO2界面产生损伤的机理，并对实验结果进行了解释。
- X射线 /
- Si-SiO2界面 /
- 辐射损伤
Abstract: Intense pulse X-ray is used to irradiate Si-SiO2 interface. C-V curves and I-V curves are tested be fore and after X-ray irradiation. Experiment results show that C-V curves have the following changes under intense pulse X-ray irradiation: (1) Flatband Volt age of high frequency C-V has a little positive drift, sodoes the gate volt age in depletion region, which is different from a negative drift under low-power pulse X-ray irradiation; (2) Oxide capacitance of low and high frequency C-V lift after intense pulse X-ray irradiation; (3) Minimum capacitance of high frequency C-V lifts after intense pulse X-ray irradiation. Experiment results also show that slopes of I-V subthreshold curves have gradually aber rant under six times intense pulse X-ray irradiation. One reason is that intense pul
- x-ray /
- si-sio2 interface /
- radiation impairment