描述激光二极管远场光强分布的理论模型
Theoretical models describing far-field intensity distributions of laser diode
-
摘要: 介绍了描述激光二极管远场光强分布的几种典型理论模型,并与实验结果作了详细比较。结果表明:激光二极管的传输和远场特性应当用非傍轴理论描述,并且远场光强分布一般与输出功率大小有关。在不同功率水平下,异质结激光二极管快轴与慢轴方向的远场行为应选用不同的模型模拟。此外,还对厄米-高斯模型做了修正,考虑了奇数阶厄米-高斯模的贡献,并用厄米-高斯模的非相干叠加代替厄米-高斯模的相干叠加。改进的厄米-高斯模型能更好描述100 mW双异质结GaAlAs LD慢轴方向的远场光强分布。
-
关键词:
- 激光二极管 /
- 远场光强分布 /
- 修正的厄米-高斯模型 /
- 相干和非相干叠加
Abstract: This paper presents a detailed comparison of several typical theoretical models describing far-field intensity distributions of laser diode with the experimental results in the literature. It is found that the propagation and far-field properties of laser diode have to be described by the non-paraxial theory, and the far-field intensity distributions vary with the output power in general. Different models should be suitably chosen to simulate the far-field behavior in the fast and slow axes of heterostructure laser diode at different power levels. In addition, the Hermite-Gaussian(H-G) model is modified, where the contributions of the odd-order H-G modes are included and the coherent superposition of H-G modes is replaced by the incoherent superposition of H-G modes. The improved model is
点击查看大图
计量
- 文章访问数: 2415
- HTML全文浏览量: 283
- PDF下载量: 500
- 被引次数: 0