高场强下半导体沿面闪络现象的研究进展
Research progress on flashover phenomena across semiconducting materials under high electric field
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摘要: 综述了国内外半导体沿面闪络的研究现状,阐述了电极结构的类型和影响闪络的主要因素;根据自定义的等值电导参数将闪络的发展划分为欧姆电导、局部闪络和贯通闪络3个阶段;通过对表面细丝电流的热过程进行实验和仿真研究,认为表面细丝电流通道的温度可以接近材料熔点,这一结果同时也支持了表面发热导致气体分子解吸附的假设;进一步通过气体解吸附的实验初步确定了存在外部的闪络通道。Abstract: The state-of-the-art about surface flashover across semiconductor all over the world is reviewed. Different types of electrode configuration are employed and influence factors on flashover characteristics are discussed. The process of flashover is divided into three phases. The self-defining equivalent conductance parameter is introduced as a criterion. Through measurement and simulation of thermal process of the current filament, it is believed that the temperature of filament channel could approach the melting point of the semiconducting material, which supports the hypothesis that temperature of flashover channel is high enough to arouse desorption of gas molecules. Furthermore, the experimental results of gas desorption primarily prove that there could be a channel outside the surface
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Key words:
- semiconductor /
- surface flashover /
- thermal process /
- current filament /
- gas desorption
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