低阻抗二极管产生的强流电子束能谱分布的数值模拟
Numerical simulation on the energy spectrum of the electron beam generated by lowimpedance diode and the influence of external magnetic field on diode impedance
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摘要: 给出了低阻抗二极管产生的电子束能谱分布及外加磁场对二极管阻抗影响的数值模拟研究结果。结果表明，即使在外加电压恒定的条件下，二极管产生的电子束也具有一定的能谱分布，这说明用二极管电压、电流波形计算脉冲电子束能谱分布是不正确的。另外,外加磁场对低阻抗二极管的阻抗特性具有较大影响，其阻抗随外加磁场的增大而减小。分析认为这是由于外加磁场强度的变化改变了二极管中束电子的运动轨迹。当没有外加磁场或外加磁场较小时，低阻抗二极管产生的电子束发生自箍缩，此时二极管电流是自箍缩饱和顺位流；当外加磁场足够强时，电子束的自箍缩被抑制，二极管电流是没有箍缩时的空间电荷限制电流。束电流小于自箍缩临界电流的二极管其阻抗将不随外加磁场的变化而变化。Abstract: of diode are studied numerically in this paper. The results show that the beam generated by the diode has an energy spread，even with constant applied voltage. Additionally, external magnetic field has great but reverse influence on the impedance of lowimpedance diode, which is, according to the author's analysis, the result of the change of the electron's track due to external magnetic field. If the beam current is less than the critical one for selfpinch, the impedance will be constant with the variation of external magnetic field.The energy spectrum of the electron beam generated by lowimpedance diode and the influence of external magnetic field on the impedance
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Key words:
- electron beam /
- diode /
- energy spectrum
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