用反差确定电子束曝光剂量与刻蚀深度的关系

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Determining relationship between electron-beam dose and etching depth by empirical formula of contrast

1.
Electron-beam Laboratory,School of Control Science and Engineering,Shandong University,Jinan 250061,China;
2.
College of Information and Electrical Engineering,Shandong University of Science and Technology,Qingdao 266510,China;
3.
Department of Scientific Research,Dongying Vocational College,Dongying 257091,China

摘要: 为了精确地确定电子束曝光剂量与刻蚀深度间的关系，根据抗蚀剂的灵敏度曲线，采用反差经验公式来确定剂量与刻蚀深度间的关系。选用正性抗蚀剂PMMA进行曝光实验，将计算值进行曲线拟合，得到的关系曲线与实验结果基本相符。当剂量在20~35 μC/cm2间时，实验值与计算值间的差值最小，说明当剂量在此范围内时该方法能够更加精确地确定剂量与刻蚀深度间的关系。采用该方法节省了实验时间，提高了刻蚀效率。
- 电子束光刻 /
- 曝光剂量 /
- 刻蚀深度 /
- 反差 /
- 吸收能量密度
Abstract: According to the sensitivity curves of resists, the empirical formula of contrast was adopted to determine the relationship between exposure dose and etching depth accurately. Exposure experiments were carried out with positive resist PMMA. With curve fitting of the calculated results, the depth-dose curve is obtained and keeps consistent with the experimental results basically. When the doses are in the range of 20~35 μC/cm2, the difference between the experimental results and the calculated ones is least. Using the contrast method in the etching can save experimental time and raise the etching efficiency.
- electron beam lithography /
- exposure dose /
- etching depth /
- contrast /
- absorbing energy density

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