1.064 μm脉冲激光作用下SiO2薄膜纹波损伤的模拟
Ripple damage mechanism of SiO2 film induced by 1.064 μm pulsed laser
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摘要: 用1.064 μm波长的单脉冲(6 ns)激光对K9玻璃基底上电子束沉积的单层SiO2薄膜进行了辐照损伤实验。以扫描电镜对K9基底的断面进行分析,并采用表面热透镜装置对膜层中的缺陷进行了检测,最后采用Matlab偏微分工具箱对缺陷的散射光光场进行了有限元模拟。实验研究表明:膜层中存在缺陷,基底中也存在大量缺陷。模拟研究表明:缺陷的位置越深,形成的条纹间距也越宽;当缺陷的形状不规则时,在局部出现近似平行的纹波结构;当缺陷的数目增加时,这些缺陷的散射光的叠加就形成相互叠加的条纹。Abstract: 1.064 μm pulsed laser induced ripple damage on SiO2 film which was deposited on K9 glass substrate by electron beam evaporation,was been investigated. The profile of K9 glass was analyzed by scan electronics microscope (SEM ), and the defects on the film were measured by using surface thermal lens (STL). The distribution of light reflected from these defects and bubbles was simulated by finite elements analysis. The experimental results showed that some defects was in the film, and lots of bubbles were found in the K9 glass as well. The simulated results showed that there were ripple damage structure was infected by the reflex laser, the width of stripes increased with the increase of the bubble depth. When the defects were erose, the ripple damage structure might become parallel. And wh
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Key words:
- laser induced damage threshold /
- sio2 film /
- electron beam evaporation /
- ripple damage
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