Zn离子注入和退火对ZnO薄膜光学性能的影响
Effects of Zn ion implantation and post-thermal annealing on ZnO thin films
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摘要: 利用溶胶凝胶方法在石英玻璃衬底上制备了ZnO薄膜，将能量56 keV、剂量1×1017 cm-2的Zn离子注入到薄膜中。离子注入后，薄膜在500~900 ℃的氩气中退火，利用X射线衍射谱、光致发光谱和光吸收谱研究了离子注入和退火对ZnO薄膜结构和光学性质的影响。结果显示：衍射峰在约700 ℃退火后得到恢复；当退火温度小于600 ℃时，吸收边随着退火温度的提高发生蓝移，超过600 ℃时，吸收边随着退火温度的提高发生红移；近带边激子发光和深能级缺陷发光都随退火温度的提高而增强。Abstract: Zn ions of dose 1×1017 cm-2 were implanted at 56 keV into ZnO films deposited by sol-gel process. After ion implantation, the as-implanted sample was annealed in argon ambient at different temperatures from 500~900 ℃. The effects of ion implantation and annealing on the structural and optical properties of the ZnO films were investigated by X-ray diffraction patterns, photoluminescence and optical absorption spectra. Measurement results showed that all diffraction peaks were recovered by annealing at 700 ℃. The absorption edge were observed to have a continuous blueshift with increasing annealing temperature when it was less than 600 ℃, while the absorption edge was found to have a gradual redshift with increasing annealing temperature when it exceeded 600 ℃. Both NBE and DLE were enh
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Key words:
- zno thin films /
- ion implantation /
- annealing temperature /
- absorption /
- photoluminescence
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