氮气退火对二氧化钛薄膜光学性能的影响
Optical properties of TiO2 film after annealing in nitrogen
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摘要: 提出了一种利用离子注入和后续退火制备氮掺杂TiO2薄膜的方法。首先在室温下向石英玻璃中注入Ti离子，随后在氮气中退火到900 ℃，从而制备了氮掺杂的玻璃基TiO2薄膜。SRIM2006程序模拟和卢瑟福背散射谱（RBS）研究表明注入离子从样品表面开始呈高斯分布，实验结果和模拟结果吻合很好。X射线光电子能谱（XPS）研究结果表明注入态样品中形成了金属Ti和TiO2，900 ℃退火后金属Ti转变成TiO2，同时N原子替代少量的晶格O原子形成了O－Ti－N化合物。紫外-可见吸收光谱（UV-Vis）结果显示，当退火温度至500 ℃时，在吸收光谱中开始出现TiO2的吸收边，随退火温度升高到900 ℃，由于O－Ti－N化合物形成，TiO2的吸收边从3.98 eV红移到3.30 eV，TiO2吸收边末端延伸到可见光区，在可见光区的吸收强度明显增加。Abstract: In order to prepare nitrogen-doped TiO2 film in the surface of SiO2 glass, Ti ion implantation was performed at room temperature in fused silica and then the as-implanted samples were annealed in nitrogen ambient up to 900 ℃. SRIM code and Rutherford backscattering spectrometry(RBS) showed a Gauss distribution of Ti ions in the surface of as-implanted samples. The experimental profile of Ti ions is consistent with the simulated one. X-ray photoelectron spectroscopy(XPS) indicated that metallic Ti and TiO2 coexisted in the as-implanted samples. After annealing at 900 ℃, metallic Ti was oxidized into TiO2, and a new compound of O－Ti－N formed because a small amount of oxygen atoms were substituted by nitrogen atoms in the lattice of TiO2. UV-Vis spectra indicated that the optical absorpti
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Key words:
- ion implantation /
- nitrogen-doped tio2 film /
- energy gap /
- annealing
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