衬底对原位氧化制备的ZnO薄膜结构和光学性质的影响
Effects of substrate on ZnO thin films prepared by in situ oxidation of Zn3N2
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摘要: 采用射频反应溅射法在不同衬底上制备Zn3N2薄膜，然后对其原位氧化制备ZnO薄膜。利用X射线衍射分析(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)等表征技术研究了不同衬底对ZnO薄膜的结晶特性和发光性能的影响。XRD研究结果显示:Zn3N2薄膜在500 ℃原位氧化3 h后完全转变为ZnO薄膜，在玻璃和熔融石英衬底上制备的多晶ZnO薄膜无择优取向，而单晶硅（100）衬底上的多晶ZnO薄膜具有较好的沿（002）方向的择优取向。PL测试结果显示:硅和熔融石英衬底上的多晶ZnO薄膜发光性能良好，激子复合产生的紫外发光峰很强，且半高宽较窄，而来自于深能级发射的绿色发光峰很弱；而玻璃衬底上的多晶ZnO薄膜发光性能较差。Abstract: ZnO thin films on various substrates were prepared by in situ oxidation of RF sputtered Zn3N2 films. The structural and photoluminscent properties of ZnO films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL). XRD results showed that Zn3N2 films had been completely transformed into ZnO films after in situ oxidization at 500 ℃ for 3 h. The films on glass and fused silica glass substrates had no preferential orientation while the films on Si (100) substrates exhibited (002)axis preferred orientation. PL measurements showed that ZnO films on Si (100) and fused silica glass substrates possessed good photoluminscent properties with strong near band edge excitonic UV emission and weak defect-related deep-level emission in the visible region
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Key words:
- zno films /
- zn3n2 films /
- in situ oxidation /
- photoluminescence /
- substrate
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