电子回旋共振微波等离子体刻蚀α:CH薄膜的工艺
Etching a:CH films by electron cyclotron resonance microwave plasma
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摘要: 为了刻蚀出图形完整、侧壁陡直、失真度小的α:CH薄膜微器件，研究了有铝和无铝掩膜、气体流量比、工作气压对刻蚀速率的影响，并对纯氧等离子体刻蚀稳定性进行了研究。研究结果表明：在相同条件下，刻蚀速率随刻蚀时间变化不大；a:CH薄膜上有铝和无铝掩膜时，刻蚀速率相同；流量一定时，刻蚀速率随氩气和氧气体积比的增大而降低，当用纯氩气时，几乎没刻蚀作用；刻蚀速率随工作气压的增大而降低。实验中，得到最佳刻蚀条件是：纯氧气，流量4 mL·s-1，工作气压9.9×10-2 Pa，微波源电流80 mA，偏压-90 V。
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关键词:
- 离子刻蚀 /
- 电子回旋共振微波等离子体 /
- a:CH薄膜 /
- 微齿轮
Abstract: In order to obtain good etching effect, parameters as working pressure and ratio of gas flux for etching processes with and without Al mask were studied. The results are as follows: under the same conditions, etching rate varies little; whether or not having Al mask on a: CH films have no effect on etching rate; when gas flux is fixed, etching rate descends with bulk ratio of argon and oxygen increasing. In this study, the best etching conditions are using pure oxygen gas, flux of 4 mL·s-1, working pressure of 9.9×10-2 Pa, microwave current of 80 mA, bias of -90 V. Under these conditions, fabricated micro-gear has vertical sidewall, small degree of distortion. Micro-gear could be released from the substrate using HF solution.-
Key words:
- ion etching /
- electron cyclotron resonance microwave plasma /
- a:ch films /
- micro-gear
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