不同原料DKDP晶体的生长和损伤阈值
Growth and laser damage threshold of DKDP crystal from different material
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摘要: 采用传统降温法，利用不同原料从氘化程度为85%的溶液生长了四方相磷酸二氘钾(DKDP)晶体，并选取部分样品进行三倍频光损伤阈值测试。实验结果表明：不同纯度原料对DKDP晶体的损伤阈值以及DKDP晶体的生长溶液稳定性的影响效果相反，即由于原料中杂质金属离子含量的差别，高纯原料生长的晶体较一般原料生长的晶体损伤阈值可提高1.5倍，但其生长溶液的稳定性比一般原料低。Abstract: In this paper, DKDP crystals were grown from 85%-deuterated solution of different materials by traditional temperature-reduction method. Then some of the crystals were chosen to test laser damage threshold by the third harmonic generation of 1 064 nm. It was found that the solution stability of DKDP crystal growth dropped slightly, but obviously, and the laser damage threshold increased for purer raw material as the metallic ionic impurity varied in the materials.
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