碱蒸气激光半导体泵浦源谱宽压窄
Linewidth narrowing of high power diode lasers for alkali vapor laser
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摘要: 笑脸效应严重制约大功率半导体激光器输出谱宽压窄。为避免笑脸效应，以中心波长780 nm单宽面源大功率半导体激光器为研究对象，利用利特曼外腔结构，优化外腔参数，在激光器自由运转19 W时，获得11.5 W、外腔效率达61%的窄线宽输出。将窄线宽输出激光通过长25 cm, 80 kPa乙烷、110 ℃的铷池，96.7%的泵浦光被吸收，通过与理论模型对比,推断半导体激光器的输出谱宽为15 GHz(0.03 nm)。Abstract: To avoid the smile effect, which seriously restricts the linewidth narrowing of high power diode laser for alkali vapor laser, a 780 nm single-broad-area high power diode laser was studied. An output beam with 11.5 W power, 61% external cavity efficiency was obtained with the optimized Littman configuration, when the laser run freely at 19 W. When the beam transmitted through a 25 cm long, 110 ℃ Rb vapor cell with 80 kPa ethane, 96.7% power was absorbed. The theory calculation supports the 0.03 nm linewidth (15 GHz spectral width) derived from experimental results.
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