CMOS电路瞬态辐照脉冲宽度效应的实验研究
Transient radiation effects of CMOS circuits with different pulse widths
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摘要: 在“强光一号”加速器上，对两种CMOS反相器和一种CMOS存储器进行了长脉冲状态和短脉冲状态下的辐照实验，测量了CMOS电路的瞬时辐照效应规律，得到了CMOS电路辐射损伤阈值与脉冲宽度的关系，分析了CMOS电路在不同脉冲宽度下的效应差异。实验结果表明：CMOS电路的辐射损伤阈值随脉冲宽度的增加而降低，在20 ns的脉冲宽度辐照下，CMOS反相器4007和4069的闩锁阈值大约为150 ns脉冲辐照下的2倍，CMOS存储器6264的翻转阈值在20 ns脉冲宽度辐照下为150 ns脉冲宽度辐照下的3倍。Abstract: Transient radiation response on CMOS circuits were investigated for different pulse widths. CMOS circuits 4007, 4069 and 6264 were irradiated using “Qiangguang-I” accelerator source. Latchup thresholds of CMOS inverters and upset level of CMOS SRAM with different pulse widths were obtained. The data clearly indicate dose-rate dependency on the pulse widths. The latchup threshold for 4007 and 4069 at 20 ns pulse width is 2 times that at 150 ns. The upset level for 6264 at 20 ns pulse width is 3 times that at 150 ns. The results show that the damage thresholds decrease with the increase of pulse widths．
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Key words:
- cmos circuits /
- radiation effects /
- latchup threshold /
- upset threshold /
- pulse width /
- dose rate
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