氧化硅稳定的氧化锡量子点薄膜的制备及其光学性能
Preparation and optical properties of SiO2 stablized SnO2 quantum dot films
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摘要: 用溶胶-凝胶-水热过程制备了氧化硅稳定的氧化锡量子点，然后将其分散到氧化硅溶液中，用旋转涂膜的方法制备光学性能良好的氧化硅稳定的氧化锡量子点薄膜。X射线衍射和高分辨透射电镜表征显示氧化锡量子点具有良好的四方金红石晶型，平均粒径约4.0 nm。室温光致发光显示这种氧化硅稳定的氧化锡量子点薄膜在356 nm和388 nm处分别有很强的激子发光和缺陷态发光。根据透射谱拟合得到了氧化锡量子点薄膜的光学禁带宽度，其值约为3.96 eＶ。Abstract: quantum dot SiO2 stabilized SnO2 quantum dot were prepared by sol-gel-hydrothermal process. Then SnO2 quantum dot thin films were obtained by spin-coating with preprocess of well dispersing SnO2 quantum dots in SiO2 sol. The as-prepared SnO2 quantum dots showed tetragonal rutile crystal structure and quantum dot radius of about 4.0 nm. The optical band gap of the thin films was derived from UV-vis transmission spectra, with value of about 3.96 eV. The SnO2 quantum dot thin films showed multi-peak photoluminescence properties at room temperature, mainly excitation emission at 356 nm and defect emission at 388 nm．
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