随机静态存储器低能中子单粒子翻转效应
Low-energy neutron-induced single-event upsets in static random access memory
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摘要: 建立了中子单粒子翻转可视化分析方法，对不同特征尺寸（0.13~1.50 μm）CMOS工艺商用随机静态存储器(SRAM)器件开展了反应堆中子单粒子翻转效应的实验研究，获得了SRAM器件的裂变谱中子单粒子翻转截面随特征尺寸变化的变化趋势。研究结果表明:SRAM器件的特征尺寸越小，其对低能中子导致的单粒子翻转的敏感性越高。Abstract: The visual analysis method of data process was provided for neutron-induced single-event upset(SEU) in static random access memory(SRAM). The SEU effects of six CMOS SRAMs with different feature size (from 0.13 μm to 1.50 μm) were studied. The SEU experiments were performed using the neutron radiation environment at Xi’an pulsed reactor. And the dependence of low-energy neutron-induced SEU cross section on SRAM’s feature size was given. The results indicate that the decreased critical charge is the dominant factor for the increase of single event effect sensitivity of SRAM devices with decreased feature size. Small-sized SRAM devices are more sensitive than large-sized ones to single event effect induced by low-energy neutrons.
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Key words:
- static random access memory /
- low-energy neutron /
- single-event upsets /
- reactor /
- feature size /
- critical charge
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