微通道板中电子时间倍增特性的数值模拟
Theoretical simulation of electron transit time and gain characteristics in microchannel plate
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摘要: 对微通道板的动态特性进行了数值模拟，得到了电子的渡越时间与入射时刻的关系曲线。获得了光电子的倍增次数随入射时刻而变化，并在考虑了入射电子为一高斯电子脉冲的情况下，分析了选通脉冲的幅度、宽度和波形对选通特性的影响。结果表明：随着倍增次数增多，渡越时间越大；当电压幅度不同时，增益曲线的峰值所对应的电子入射时刻也不同。Abstract: The dynamic characteristics of micro-channel plate are simulated. The transit time and gain curves are obtained in the simulation. The simulation shows that the numbers of the electron collision on the channel wall of the microchannel plates(MCP) are related to the arriving time of the incident photoelectrons and the more frequently electrons collide with the channel, the longer transit time they need. The influence of the amplitude, width and shape of the driving voltage pulse on the exposure time and the gain of MCP are also studied when the incident electrons have a Gaussian distribution. It is concluded that the time of the peak value of the gain curve varies with different voltage pulse amplitude.
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Key words:
- microchannel plate /
- transit time /
- exposure time /
- framing camera /
- inertial confinement fusion /
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