基于半导体断路开关的8 MW,10 kHz脉冲发生器
8 MW, 10 kHz semiconductor opening switch pulsed generator
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摘要: 功率器件半导体断路开关具有高重复频率工作能力。采用高速绝缘栅双极晶体管组件作为初级充电回路的主开关，建立了一台工作频率为10 kHz的脉冲发生器。脉冲发生器采用磁饱和脉冲变压器、磁开关及高压脉冲电容器组等固态器件进行两级脉冲压缩，产生小于100 ns的电流脉冲,对半导体断路开关进行泵浦，半导体断路开关反向截断泵浦电流在负载上产生高压脉冲输出。实验装置在电阻负载上得到了脉冲输出功率约为8.6 MW，脉冲宽度约10 ns，重复频率10 kHz的高压脉冲输出。Abstract: This paper presents the research carried out with the semiconductor opening switch(SOS). Loaded with high frequency pumping current, the switch could work on high frequency (1 MHz). A high frequency nanosecond-pulsed generator with a pulse power up to 9.3 MW, output voltage of 22.0~35.7 kV, pulse duration of about 10 ns, and repetition rates of 10 kHz is developed. Ultrafast IGBT is used in primary charged unit to provide low voltage pulse for magnetic compression unit. The magnetic switch and saturable transformer are used to compress primary pulse and pump SOS. The reverse pumping current switching-off is performed by SOS in about 4.3 ns, which results in the formation of an output voltage pulse across output load.
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