屏电极结构对微通道板成像器间隙放电的影响
Effect of screen-electrode structures on MCP imager vacuum-gap discharge
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摘要: 利用铝屏和氧化铟锡(ITO)屏两种结构的微通道板(MCP)成像器进行了放电实验，通过直流首击穿后器件的绝缘强度和电极熔蚀形貌变化，分析了屏电极结构对放电的影响。实验表明，铝屏MCP成像器首击穿后，铝膜电极出现如火山口状的熔蚀形貌，在10 μs脉冲屏压下绝缘强度降低到3 kV/mm以下，绝缘强度与MCP无关。而ITO屏MCP成像器首击穿后，荧光质向MCP的质量迁移具有抑制阴极发射的作用，所以放电具有稳定的场发射特性，在10 μs脉冲屏压下绝缘强度可达到9 kV/mm。分析表明，MCP成像器间隙放电的发展主要依赖于屏电极结构，ITO屏的电极结构有利于MCP成像器绝缘性能的提高。Abstract: The vacuum-gap discharge damage of micro-channel plate(MCP) imagers based on two screen-electrode structures, with Al-screen and indium-tin-oxide(ITO) screen respectively, is investigated after first arcing. The results show that the erosion pattern of Al-screen MCP imager appears as crater, and the electric insulating strength is less than 3 kV/mm under 10 μs-wide screen voltage, independent of MCP. The erosion of ITO-screen mostly appears as phosphor transporting to MCP, which drives field emission to steady state, and the electric insulating strength can reach 9 kV/mm at 10 μs-wide voltage. Thus, the discharge of MCP imagers depends mostly on screen-electrode structure, and ITO-screen MCP imagers can obtain higher electric insulating strength.
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Key words:
- vacuum discharge /
- micro-channel plate imagers /
- al-screen /
- ito-screen
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