不同波长三倍频DKDP晶体的激光损伤
Laser-induced damage of DKDP crystal for third harmonic generation under different wavelengths
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摘要: 采用传统降温法，利用高纯原料从氘化程度为80%的溶液生长了四方相磷酸二氘钾（DKDP）晶体，并按Ⅱ类三倍频方式切割晶体。三倍频用DKDP晶体的最大问题在于其抗光伤阈值低于KDP晶体，严重限制了激光输出的能量密度和晶体使用寿命。考察了不同波长下三倍频DKDP晶体的损伤阈值，以及激光退火效应。实验表明，激光退火对于DKDP晶体的损伤阈值有显著的提升作用，基频、倍频、三倍频的提升效果分别达到1.4，1.9，2.7倍，是改善DKDP晶体抗光伤能力的有效途径。
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关键词:
- 四方相磷酸二氘钾晶体 /
- 三倍频 /
- 激光损伤 /
- 激光退火
Abstract: DKDP crystal was grown from 80%-deuterated solution of high pure materials and the crystal was cut to type Ⅱ tripler sample. The major problem of DKDP crystal for third harmonic generation (THG) is its low laser-induced damage thres-hold with respect to KDP, which greatly limits energy fluence of output laser and crystals’ life. Laser-induced damage thres-hold of DKDP crystal for THG was measured under different wavelengths and the effect of laser annealing was also investigated. The experiment shows that laser annealing could obviously improve laser-induced damage threshold of DKDP crystal. The thres-hold is improved to 1.4, 1.9 or 2.7 times that before annealing for fundamental, second or third harmonic, respectively. Thus laser annealing is an effective approach to enhance laser-induc-
Key words:
- dkdp crystal /
- third harmonic generation /
- laser-induced damage /
- laser annealing
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