不同形状的光斑触发砷化镓光导开关
GaAs photoconductive semiconductor switch triggered by laser spots with different profiles
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摘要: 为研究使用不同形状光斑触发光导开关对光电导特性的影响，研制了12 mm间隙的半绝缘砷化镓光导开关，在不同的偏置电压下，使用波长为1 064 nm的不同能量的激光触发光导开关并进行了光电导测试。使用了不同形状的光斑（包括面状、线状和点状光斑）触发光导开关并进行了光电导特性的比较，讨论了触发光参数对光导开关特性的影响。对处于开关电极间不同位置的线状光斑触发特性进行了比较，结果显示,本征光电导和非本征光电导情况下光斑位置对光电流的影响正好相反。Abstract: As an important part of photoconductive semiconductor switch the laser triggering system was studied. A photoconductive semiconductor switch with a gap of 12 mm was fabricated from semi-insulating GaAs. Illuminated by laser pulses with different incident optical energies at a wavelength of 1 064 nm, photoconductivity tests of the photoconductive semiconductor switch were performed at different bias voltages. The laser spots with different profiles were used to trigger the photoconductive semiconductor switch, and the results of the photoconductivity tests were compared and discussed, which show that spot location has opposite influence on photocurrent for intrinsic and extrinsic photoconductivity.
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