CCD在fs激光辐照下的损伤研究
Research on femtosecond laser induced damage to CCD
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摘要: 用脉宽为60 fs、波长为800 nm的 fs激光辐照电荷耦合器件，研究了电荷耦合器件在fs激光作用下的失效问题。实验得到fs激光作用下电荷耦合器件的失效阈值为4.22×10－3 J/cm2。这比ns激光作用下电荷耦合器件的损伤阈值低2～3个量级。对该器件进行显微观测，在光敏元上没有发现损伤，但在器件的栅极上发现了明显的激光引起的损伤痕迹。
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关键词:
- fs激光 /
- 电荷耦合器件(CCD) /
- 失效阈值
Abstract: The failure of charge coupled devices (CCD ) irradiated by 800nm fs laser with pulse duration of 60 fs was studied.The result shows that the failure threshold of CCD irradiated by fs laser is 4.22×10－3 J/cm2. and it is 2～3 order lower than the failare threshold of CCD irradiated by ns laser. According to the micro-analysis of CCD, it is found that the damage does not take place at the light activated elements but at the grid electrode of the device．-
Key words:
- femtosecond laser /
- charge coupled devices (ccd ) /
- failure threshold
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