采用AlSb缓冲层生长2.3 μm InGaAsSb/AlGaAsSb多量子阱结构
Growing of 2.3 μm InGaAsSb/AlGaAsSb multi-quantum-well via AlSb buffers
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摘要: 针对常见的GaSb衬底的InGaAsSb/AlGaAsSb多量子阱结构进行了设计和外延生长。样品通过X-射线测试，有多级衍射卫星峰出现，表明量子阱结构的均匀性和界面质量较好，引入AlSb缓冲层可以降低衬底与外延层之间的界面自由能，使AlSb起到了一个滤板的作用，抑制了位错的扩散。光荧光谱测试表明，室温下量子阱结构中心发光波长在2.3 μm附近。
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关键词:
- AlSb缓冲层 /
- InGaAsSb/AlGaAsSb多量子阱 /
- 中红外 /
- 锑化物
Abstract: GaSb-based InGaAsSb/AlGaAsSb multi-quantum-wells structure are designed and grown by molecular beam epitaxy(MBE). Characterization of the layers by X-ray diffraction and photoluminescence has been performed. The results showed that the epilayer has high uniformity and quality. AlSb buffer layer can reduce free energy between substrate and epilayer, thus it works as filter to restrain the dislocations. At room temperature, the emission spectra are centered at about 2.3 μm．-
Key words:
- alsb buffer layer /
- ingaassb/algaassb multi-quantum-well /
- mid-infrared /
- antimonide
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