脉冲激光作用单晶硅的等离子体光谱分析
Plasma spectrum analysis of monocrystalline silicon irradiated by pulsed laser
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摘要: 从激光与物质相互作用理论出发，对脉冲激光作用单晶硅的热特性进行分析。建立一套实验装置，所用激光光源的波长为1 064 nm,脉宽为10 ns，重复频率为1 Hz。得到单晶硅的等离子体谱及热辐射谱，在单晶硅的光电性质基础上对其热表面损伤进行理论分析。提取380~460 nm波段的单晶硅等离子体光谱，分析了谱图中SiⅠ390.52 nm, SiⅡ385.51 nm,SiⅡ413.12 nm三条谱线的相对强度与激光输出功率密度的对应关系。Abstract: Based on the theory of interaction between laser and material, we analyze thermal characteristics of pulsed laser irradiated monocrystalline silicon. By setting up experiment equipment including a laser lamp-house, the laser wavelength is 1 064 nm, the pulse-width is 10 ns and the repetition frequency is 1 Hz, we get the plasma and the thermal radiation spectrum of the monocrystalline silicon. We theoretically analyze the high temperature surface damnification of monocrystalline silicon according to its optical-electrical characters. After analysing waveband of the plasma spectrum of monocrystalline silicon in 380~460 nm, we find out the corresponding relation between the export frequency density of the laser and the comparative intensity of the three spectral lines, SiⅠ 390.52 nm, SiⅡ38
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