空间低剂量率辐射诱导电荷效应评估技术研究
Estimating research on space low dose rate radiationinduced charge effects
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摘要: 介绍了LC4007RHA和LC4007RHB两种器件空间低剂量率辐射诱导电荷效应评估情况,研究结果表明:在MIL-STD-883C 测试方法1019.4的基础上,60Co辐照加25℃室温退火,可以提供对空间氧化物陷阱电荷效应相对于1019.4不太保守的估计;另外,就美军标1019.4测试方法中利用100℃ 168h高温加速“反弹”实验来检验空间环境中与界面态相关的失效可能出现的现象进行了讨论。Abstract: This paper presents an estimate method on radiationinduced charge effect from LC4007A and LC4007B device in lowdose space environment. According to the result, on the basis of MILSTD 883C, Test Method 1019.4, 60Co irradiation plus 25℃ annealing can provide effects of oxidetrip charge on MOS device response in space that is estimated significantly less conservative than MILSTD 883C, Test Method 1019.4. The possible phenomena of oneweek hightemperature anneal in MILSTD 883C, Test Method 1019.4 detecting interfacetrip related failures in MOS devices were discussed.
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Key words:
- mos device /
- low doserate /
- charge effect /
- rebound phenomenon
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