激光干涉光刻法制作100 nm掩模
Fabrication of 100 nm mask by laser interference lithography
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摘要: 介绍了一种利用激光干涉光刻技术得到特征图形，并通过离子束刻蚀将图形转移到铬层上，从而获得掩模的方法。针对掩模透光率以及对干涉图形对比度可能产生影响的两个参数分别进行了数值仿真，从而证明此方法的可行性和参数的优化选择。自搭干涉光刻实验系统，用257 nm的激光光源实现光刻，得到特征尺寸为100 nm的图形，再经过离子束刻蚀，最终得到周期200 nm、线宽100 nm的掩模。Abstract: This paper presents a mask fabrication method, which uses laser interference lithography to prepare interference patterns, and then transfers the patterns to the chromium layer by ion beam etching (IBE) to gain the mask. A series of rigorous numerical simulations have been done on the light transmission rate of the mask and two parameters that may affect the contrast of interference patterns for parameter optimization. An interference lithography system was constructed with 257 nm laser light source, and patterns with feature size of 100 nm were developed. Then masks with period of 200 nm and line width of 100 nm were obtained by IBE.
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