4H-SiC NMOS电子、质子辐照数值模拟
Numerical simulation of 4H-SiC NMOS under electron and proton irradiation
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摘要: 分析了高能电子、质子对4H-SiC的损伤机理，建立了4H-SiC NMOS器件物理模型。电子、质子辐照效应模型。应用ISE-TCAD软件进行数值模拟计算，得出在能量为2.5 MeV、注量为5×1013 cm-2的电子辐照及能量为6.5 MeV、注量为2×1014 cm-2的质子辐照下，4H-SiC NMOS转移特性曲线和亚阈值漏电流曲线变化的初步规律。数值模拟结果与相同条件下Si NMOS实验结果吻合较好。Abstract: The damage mechanism of 4H-SiC NMOS under high energy electron and proton irradiations was analyzed. The device’s physical model, electron irradiation model and proton irradiation model were established to simulate the drain current and irradiation effects with software ISE-TCAD. The variation of drain current with gate voltage and drain voltage was obtained for 4H-SiC NMOS irradiated by 2.5 MeV electron beam of 5×1013 cm-2 fluence and 6.5 MeV proton beam of 2×1014 cm-2 fluence, respectively. The simulation results are in good agreement with experimental ones under the same conditions.
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Key words:
- 4h-sic /
- electron irradiation /
- proton irradiation /
- numerical simulation
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