杂质对溶胶-凝胶SiO<sub>2</sub>薄膜激光损伤的影响

章春来; 李熙斌; 吕海兵; 袁晓东; 王治国; 祖小涛

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杂质对溶胶-凝胶SiO₂薄膜激光损伤的影响

1.
中国工程物理研究院激光聚变研究中心, 四川绵阳 621 900;
2.
电子科技大学物理电子学院, 成都 61 0054

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出版历程
- 刊出日期: 2011-05-11

Influence of impurities on laser-induced damage of sol-gel SiO2 films

1.
Research Center of Laser Fusion,CAEP,P.O.Box 919-988-5,Mianyang 621900,China;
2.
School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

摘要

摘要: 采用溶胶-凝胶法制备了含有吸收性杂质和非吸收性杂质的SiO2增透膜，采用波长为1 064 nm的激光对其进行了小光斑激光预处理，对比研究了预处理前后的激光损伤差异，研究表明：激光预处理对于洁净的SiO2薄膜影响不大；含10 μm SiO2颗粒杂质的样品微透镜效应很明显，容易成为损伤起始的种子，激光预处理后情况有所改善；含有CeO2颗粒杂质的样品表现出了很强的吸收性质，损伤阈值降低到不足洁净样品的一半。所有样品激光预处理后损伤形貌未发生变化，透光率峰值均有约50 nm的蓝移。
- 溶胶-凝胶 /
- SiO2增透膜 /
- 激光预处理 /
- 激光辐照损伤
Abstract: Three kinds of anti-reflective SiO2 films, without impurities, with SiO2 particulate impurities and with CeO2 particulate impurities, were deposited on K9 glass by sol-gel dip-coating method. The influence of impurities on laser-induced damage of films was investigated before and after preconditioning with a 1 064 nm Nd:YAG pulsed laser. No obvious change in morphologies and damage threshold appears for pure films after conditioning. For the films with SiO2 impurities, 10 μm-size SiO2 particles show obvious micro-focusing effect and act as damage-initiating seeds, which can be removed by conditioning. Moreover, the samples with CeO2 impurities have intense absorbing character, and their laser-induced damage threshold is les
- sol-gel /
- sio2 anti-reflective films /
- laser preconditioning /
- laser-induced damage