介质单边二次电子倍增的理论分析与数值模拟
Theoretic analysis and numerical simulation of dielectric single-surface multipactor discharge
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摘要: 针对介质单边二次电子倍增现象，理论分析给出了其动力学方程、二次电子初始能量与角度分布，结合二次电子发射的材料特性，研究了二次电子倍增的理论预估敏感区间。利用蒙特卡罗方法抽样选取电子初始发射能量和角度，数值研究了二次电子倍增的敏感区间，并与理论结果进行了比对，给出了二次电子数目随时间的增长关系；采用固定时间步长并考虑电子束动态加载饱和效应的细致蒙特卡罗方法，研究了二次电子数目、直流场、射频场、介质表面沉积功率、电子放电功率、二次电子碰撞能量及电子渡越时间等二次电子倍增特性物理量的变化过程，并且讨论了初始电流及二次电子倍增工作点对二次电子倍增整个过程的影响作用，得出了二次电子倍增存在初始阈值发射电流密度的结论。
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关键词:
- 高功率微波 /
- 介质单边二次电子倍增 /
- 理论分析 /
- 蒙特卡罗方法
Abstract: The dielectric single-surface multipactor discharge was theoretically analyzed and numerically simulated. Firstly, the dynamics equations, and the distributions of initial emission energy and angle of secondary electrons were introduced, and the susceptibility curve of multipactor discharge was estimated and analyzed in theory depending on material characteristic of secondary emission. Secondly, Using Monte-Carlo method simulating the initial emission energy and angle, the susceptibility curve of multipactor discharge was studied and discussed compared with the theoretic results, and the relationship was given between the number of secondary electrons and time. Finally, considering electron beam loading and saturation, the particular Monte-Carlo method with fixed time step was adopted in s -
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