激光二极管侧面泵浦高功率266 nm紫外激光器
Laser diode-side-pumped high power 266 nm ultraviolet laser
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摘要: 报道了一种半导体激光列阵侧面泵浦Nd：YAG四倍频266 nm全固态紫外激光器，采用Z型腔结构，Ⅰ类临界相位匹配LBO和BBO晶体分别作为二倍频晶体和四倍频晶体。在调制频率为5 kHz时，最终获得了2.1 W的266 nm紫外激光输出，单脉冲能量420 μJ, 绿光到紫外激光的转换率为13.13%，在相同的泵浦功率下利用V型腔结构仅获得305 mW的266 nm紫外激光输出。Abstract: An all-solid-state laser diode(LD)-side-pumped Nd:YAG ultraviolet(UV) laser at 266 nm is reported, which is based on fourth harmonic generation and adopts zigzag cavity structure. The type-Ⅰ critical phase matched LBO and BBO crystals are used as the second harmonic and fourth harmonic generation crystals, respectively, and 2.1 W UV laser of 266 nm with single pulse energy of 420 μJ is obtained at the pulse repetition rate of 5 kHz with the conversion efficiency of 13.13% from green to ultraviolet light. With V-shaped cavity configuration, only 305 mW 266 nm UV laser is obtained under the same condition.
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