高压快速离化半导体开关及其脉冲压缩特性
High voltage semiconductor fast ionization device and its properties of pulse compression
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摘要: 介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构，实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性，并对实验研究结果进行分析。在50 Ω负载下，将一输入脉冲幅度1.7 kV 、脉宽4 μs、重频2 kHz高压脉冲，通过FID压缩成脉冲幅度1 985 V、脉宽90 ns、重频2 kHz的高压脉冲。Abstract: The special structure and working principle of all-solid-state fast ionization device(FID) are studied. The compression characteristics in pulse voltage amplitude and pulse width of FID are given through experiment study at different exterior bias voltages. The experimental result of transforming the input pulse of voltage 1.7 kV, width 4 μs, repetition frequency 2 kHz into the output pulse of voltage 1 985 V, width 90 ns, repetition frequency 2 kHz is obtained from FID compression under 50 Ω load.
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Key words:
- high voltage pulse /
- fast ionization devices /
- semiconductor switch /
- plasma /
- pulse compression
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