空腔Cu靶的化学镀制备方法及其特性
Electroless plating and characteristics of hohlraum Cu target
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摘要: 在预处理芯轴(基体)表面金属的催化作用下,通过镀液可控制的还原反应在芯轴表面不断产生金属Cu的化学沉积,然后刻蚀掉芯轴,经Cu层表面钝化处理而得到空腔Cu靶。对Cu靶的表面形貌、孔隙率、厚度及其均匀性、Cu靶纯度、耐氧化性能等进行了测试与分析,实验结果表明,所测各项数据达到Cu靶ICF应用的性能指标。化学镀方法为制备其它金属或合金空腔靶提供了新的途径。
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关键词:
- 惯性约束聚变(ICF) /
- 空腔靶 /
- 化学镀Cu /
- 抗氧化处理
Abstract: This paper introduces the electroless plating technique to fabricate integral hohlraum Cu target. Catalyzed by the metal surface of the pretreated PMMA axis, the reducing reaction deposits Cu on the axis and then the axis is etched and the surface passivation of the Cu plating is performed. Cu target obtained by this technique can meet the requirements of ICF targets,which has:(1) a surface of no porosity and no crackle; (2) a 17μm thick wall which can retain it's erectile form; (3) a plating of even thichness and of 99.2% Cu content; (4) the passivated surfae which shows no obvious change in 4 weeks. This fabrication technique provides a way to make other metal and alloy integral hohlraum targets for ICF.
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