单晶YSZ的Xe<sup>+</sup>辐照损伤的电子显微分析

向霞; 祖小涛; 吴继红; 朱莎; 王鲁闵

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单晶YSZ的Xe⁺辐照损伤的电子显微分析

1.
电子科技大学应用物理系,四川成都 61 0054;
2.
美国密西根大学核工程与放射科学系,安娜堡 MI 481 09

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出版历程
- 刊出日期: 2004-01-15

TEM analysis on irradiation damage of xenon-implanted yttria-stabilized zirconia single crystals

1.
Department of Applied Physics,University of Electronic Science and Technology of China,Chengdu 610054,Ｃhina;
2.
Department of Nuclear Engineering and Radiological Sciences,University of Michigan,Ann Arbor,MI 48109,USA

摘要

摘要: 不同注量200keV Xe+ 注入YSZ单晶样品的电子显微分析结果表明，随着辐照注量的增加，缺陷簇的密度增大，在1×1015~1×1016cm-2Xe+注量，缺陷簇密度迅速增大，形成间隙型位错环；当Xe+注量增大到1×1017cm-2，缺陷簇密度的增加变得缓慢，并且有直径为2～4nm的Xe气泡析出。选区电子衍射花样表明YSZ样品没有产生非晶化转变。在Xe+辐照的离位率高达约350dpa的情况下，YSZ晶体没有非晶化，其原因主要是由于注入的Xe+以气泡形式析出。
- 单晶YSZ /
- Xe＋辐照 /
- 透射电子显微镜 /
- 辐照缺陷
Abstract: Transmission electron microscopy (TEM) was utilized to characterize the damage structure and the formation of Xe bubbles in 200 keV Xe+ implanted yttria-stabilized zirconia (YSZ) single crystals with different fluences. TEM analysis results showed that the density of defect clusters increased with increasing ion fluence. The density of defect clusters increased rapidly and formed clear interstitial type dislocation loops within dose range from 1×1015 Xe＋cm－２to 1×1016 Xe+ cm－2, and then the density of defect clusters increased slowly up to a dose of 1×1017 Xe+ cm－2. Small bubbles (2~4 nm in diameter) precipitate in the sample at a dose of 1×1017 Xe+ cm－2. No amorphization was observed in the selected area diffraction (SAD) pattern. These results also made it clear that no amorphiz
- ysz single crystal /
- xe ion irradiation /
- tem /
- irradiation defects