含氮类金刚石薄膜的紫外辐照研究
Studies of ultraviolet light irradiation effect on diamondlike carbon(N) films
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摘要: 用射频等离子体方法在玻璃基底上制备的类金刚石（DLC）薄膜，采用离子注入法掺氮，并对掺氮DLC薄膜紫外（UV）辐照前后的性能变化进行了研究。研究结果表明：随氮离子注入剂量及UV辐照时间的增加，位于2 930cm-1附近的SP 3C-H吸收峰明显变小，而位于1 580cm-1附近的SP2C-H吸收峰则明显增强，薄膜的电阻率明显呈下降趋势；随UV辐照时间的增加，位于1 078cm-1附近的Si-O-Si键数量及位于786cm-1附近的Si-C键数量明显增加。即氮离子注入和UV辐照明显改变了DLC薄膜的结构与特性。
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关键词:
- 类金刚石薄膜 /
- 氮离子注入 /
- UV辐照 /
- Raman与红外光谱 /
- 结构与特性
Abstract: In the last few years, the study of nitrogen incorporation into diamondlike carbon (DLC)films has received special attention. The DLC films have been deposited on glass substrates using RF plasma deposition method. N ions were introduced by ion implantation, and DLC(N) films were irradiated by ultraviolet light. Using Raman and infrared transimissing spectroscopy, the authors investigated the UV ray irradiation and N ions implantation effect on the structure and properties of DLC(N) films. The study showes that, UV ray and N ions irradiation does intensive damage on SP3C-H bonds, then leads to the increase of SP2C-H bonds and the decrease of resistivity obviously. It is clear that UV ray causes the increase of Si-O-Si and Si-C bonds also, i.e. the structure and properties of DLC films ha -
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