Abstract: To realize the compatibility of both high power electromagnetic pulse(EMP) protection and signal receiving and transmitting, a new electromagnetic protection structure, i.e. energy selective surface(ESS), is proposed based on energy selective mechanism. Employing the voltage dependent conductive characteristic of semiconductor, ESS can promptly turn its state from high impendence to low impendence under high power radiation, and therefore has energy low-pass characteristic and wide band. In the design and simulation, PIN diode array was employed, and filed-circuit co-simulation was carried out. The relationship of ESS, PIN diode impedance and incident EMP intensity and rise time has been described, and the results are summarized as follows: the peak leakage power and response time are proportional to thickness of layer Ⅰ and the amplitude of incident EMP electric intensity, and inversely proportional to minority carrier life time.