High-temperature thermal cleaning for GaAs photocathode
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摘要: GaAs光阴极在进行Cs-O激活前，激活层表面必须达到原子级洁净。最常用且最有效的洁净方法是高温热清洗法。然而，在热清洗过程中对处在真空系统中的光阴极表面温度进行精确测量却是非常困难的。采用ANSYS软件对GaAs光阴极热清洗过程进行热分析，得到光阴极表面的温度分布，并讨论该温度分布情况下激活得到光阴极的量子效率分布。Abstract: The surface of the active layer of GaAs photocathode must reach the atomically clean surface before Cs-O activeness. The most effective method, which is used quite often, is the high-temperature thermal cleaning. It is very difficult to measure the surface temperature of a photocathode precisely in a vacuum system during the thermal cleaning. In this paper, we use ANSYS program to analyse GaAs photocathode during the thermal cleaning, with the temperature distribution on the photocathode surface obtained. We also discuss quantum efficiency distribution with the temperature distribution on the photocathode surface.
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Key words:
- GaAs photocathode /
- thermal cleaning /
- quantum efficiency /
- thermal analyses /
- simulation calculation
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