GaAs阴极光电发射特性
Photoelectric emission of gallium arsenide cathode
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摘要: 采用氧过量YOYO激活工艺对经高温清洁的砷化镓(GaAs)晶片进行激活,测量其量子效率和在激光及背景光照射下的使用寿命,得到了4.66%的量子效率;在电子枪中的实验获得了平均流强大于1 mA的束流。分析了真空度、高温清洁温度、铯氧激活工艺等因素对GaAs光阴极初始量子效率和使用寿命的影响。
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关键词:
- GaAs光阴极 /
- 量子效率 /
- 氧过量YOYO激活法 /
- 寿命
Abstract: The gallium arsenide wafer was activated by excessive-oxygen YOYO activation after high-temperature cleaning on the wafer. The quantum efficiency and the lifetime under laser illuminating were measured, and the maximum quantum efficiency was 4.66%. An average current over 1 mA was obtained in the DC-gun experiment. In the end, we discussed the reasons for vacuum degree, high temperature cleaning and Cs-O activating process causing the low maximum quantum efficiency and low lifetime of the gallium arsenide wafer.
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