High power 940 nm quantum well laser with asymmetric structure
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摘要: 为改善940 nm大功率InGaAs/GaAs半导体激光器输出特性,通过模拟计算了非对称波导层及限制层结构的光场分布,并参照模拟制作了非对称结构半导体激光器器件。采用低压金属有机物气相沉积(LP-MOCVD)生长技术,获得了低内吸收系数的高质量外延材料,通过实验数据计算得到激光器材料内吸收系数仅为0.44 mm-1。进而通过管芯工艺制作了条宽100 m、腔长2000 m的940 nm半导体激光器器件。25 ℃室温10 A直流连续(CW)测试镀膜后器件阈值电流251 mA,斜率效率1.22 W/A,最大输出功率达到9.6 W,最大光电转化效率超过70%。
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关键词:
- 量子阱激光器 /
- 大功率 /
- 非对称结构 /
- InGaAs/GaAs /
- 金属有机物化学气相沉积
Abstract: In order to improve the performance of the general broad area high power 940 nm InGaAs/GaAs semiconductor laser diode (LD), we design a new type quantum well LD with an asymmetric waveguide and cladding structure. High material quality with low internal loss of 0.44 mm-1 has been achieved using low pressure metal organic chemical vapor deposition (LP-MOCVD) method. Broad-area lasers were fabricated with the wafers grown on GaAs substrates. For the 940 nm devices with 100 m-wide stripe and 2000 m-long cavity under 25 ℃ continuous wave (CW) operation condition of 10 A, the typical threshold current is 251 mA, the slope efficiency is 1.22 W/A , and the maximum output power reaches 9.6 W. The laser diode yielded a maximum power conversion efficiency over 70%.
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