Total dose effect on optocouplers subjected to different dose rate irradiation
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摘要: 开展了光电耦合器在0.01,0.1,1.0和50 rad(Si)/s四种剂量率下的伽玛射线（60Co）辐照实验,结果表明：辐照导致光电耦合器电流传输比下降,辐照到相同总剂量,电流传输比下降幅度基本上随剂量率的减小而增大。在不拆封破坏光电耦合器的情况下,通过对光电耦合器中的发光二极管I-V特性、光敏晶体管增益及初级光电流的测试,以及耦合介质传输损耗特性的分析,证明了导致光电耦合器电流传输比退化的主导因素是光敏晶体管C-B区光响应度的下降。
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关键词:
- 光电耦合器 /
- γ总剂量 /
- 低剂量率辐照损伤增强
Abstract: 60Co irradiation on optocouplers is examined at dose rate of 0.01, 0.1, 1.0 and 50 rad/s. The experimental results show that current transfer ratio decreases after exposure and the amplitude of degradation at a given total dose depends on the dose rate, namely more degradation with lower dose rate. The I-V characteristics of LED, gain and primary photocurrent of phototransistor, and transmission loss in optical coupling medium are tested and analyzed, which lead to a conclusion that photoresponse degradation in C-B region of phototransistor is the main contribution to CTR degradation of optocouplers.-
Key words:
- optocoupler /
- γ total dose /
- enhanced low dose rate sensitivity
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