Mechanism of crossover of transconductance curves in 0.5 μm multi-finger NMOS FETs before and after γ irradiation
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摘要: 在研究0.5 m多栅NMOS场效应管辐照总剂量效应实验时,发现部分多栅NMOS器件辐照前后的转移特性曲线出现交叉现象,相关的解释鲜见报道。经过分析提出假设:部分多栅NMOS在辐照实验过程中各栅极受到剂量不均匀的辐照,导致辐照前后转移特性曲线出现交叉现象。计算机仿真结果表明:受到剂量不均匀的辐照后,多栅NMOS各栅极氧化层陷阱电荷和硅-二氧化硅界面电荷浓度不一致,使各栅极阈值电压不同步漂移,导致器件跨导退化和转移特性曲线交叉。通过仿真验证能够说明,所提出的假设合理地解释了实验中的现象。Abstract: The crossover phenomenon of transconductance curves was found in part of 0.5 m multi-finger NMOS FETs after irradiation experiments. To give a reasonable explanation, we assumed that the radiation effects on each gate of this part of multi-finger NMOS FETs are non-uniform, and the corresponding computer simulations were performed. The simulation results indicate that after non-uniform irradiation, the difference of oxide trapped charges and interface charges of each gate in multi-finger NMOS FETs will make threshold voltage shift asynchronously, leading to the degeneration of transconductance and the crossover of transconductance curves.
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