具有二氧化硅温度补偿层的薄膜体声波谐振器的建模与分析（英）

高杨; 周斌; 何移; 何婉婧

doi:10.11884/HPLPB201527.014103

具有二氧化硅温度补偿层的薄膜体声波谐振器的建模与分析（英）

doi: 10.11884/HPLPB201527.014103

高杨^1, ,,
周斌²,
何移²,
何婉婧³

1.
中国工程物理研究院电子工程研究所, 四川绵阳 621 900;
2.
西南科技大学信息工程学院, 四川绵阳 621 01 0;
3.
重庆大学新型微纳器件与系统技术国防重点学科实验室, 重庆 400044

详细信息

通讯作者:
高杨

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- 被引次数: 1
出版历程
- 收稿日期: 2014-10-23
- 修回日期: 2014-12-22
- 刊出日期: 2015-01-20

Modeling and simulation on film bulk acoustic resonator with silicon oxide temperature-compensated layer

Gao Yang^{1
, ,},
Zhou Bin²,
He Yi²,
He Wanjing³

1.
Institute of Electronic Engineering,CAEP,P.O.Box 919-512,Mianyang 621900,China;
2.
School of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,China;
3.
State Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology,Chongqing University,Chongqing 400044,China

摘要

摘要: 薄膜体声波谐振器(FBAR)的谐振频率会受到外界环境温度的影响而产生漂移,对于FBAR滤波器而言,这种温度-频率漂移特性会导致其中心频率、插入损耗、带内纹波等性能发生变化,降低其在电学应用中的可靠性。应用ANSYS有限元分析软件,对一个典型Mo-AlN-Mo三层结构的FBAR进行了温度-频率漂移特性的仿真,得到其在［－50 ℃, 150 ℃］温度范围内的频率温度系数(TCF)约为－3510－6/℃。在FBAR叠层薄膜结构中添加了一层具有正温度系数的二氧化硅温度补偿层,分析了该补偿层厚度对FBAR的温度-频率漂移特性、谐振频率和机电耦合特性的影响。设计了具有一层二氧化硅温度补偿层的FBAR叠层,由Mo/AlN/SiO2/Mo多层薄膜构成,仿真得到其频率温度系数为0.87210－6/℃；与没有温度补偿层的FBAR相比,温度稳定性得以显著改善。关键词: Abstract: Key words:
- 射频微电子机械系统 /
- 薄膜体声波谐振器 /
- 频率漂移 /
- 温度系数 /
- 稳定性 /
- 有限元分析
Abstract: The property of temperature-frequency drift has an effect on the passband ripples, center frequency and insertion loss of film bulk acoustic resonator (FBAR) filters, reducing the reliability of its electrical application. A temperature-frequency drift simulation of a typical Mo/AlN/Mo 3-layered FBAR is achieved using finite element analysis software ANSYS, and the simulated temperature coefficient of frequency is about －3510－6/℃ within the temperature range ［－50 ℃, 150 ℃］. By adding a SiO2 temperature compensated layer with positive temperature coefficient in the FBAR stacked films structure, the effects of the compensated layer thickness on temperature-frequency drift, resonant frequency and electromechanical coupling are analyzed. The simulated temperature-frequency coefficient of the FBAR stack with a SiO2 temperature compensated layer, which is composed of Mo/AlN/SiO2/Mo multi-layer films, is about 0.87210－6/℃, which shows significantly improved temperature stability compared to that without the temperature compensated layer.
- radio frequency micro-electro-mechanical system /
- film bulk acoustic resonator /
- frequency drift /
- temperature coefficient /
- stability /
- finite element analysis