1064 nm nanosecond laser induced damage effect on graphene
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摘要: 通过化学气相沉积法制备,并转移到基片得到1~3层石墨烯样品。利用霍尔效应及微区拉曼光谱测量,结合光学显微镜观察,分析了不同层数石墨烯在1064 nm纳秒激光辐照下的损伤特性。实验发现1~3层石墨烯的激光损伤阈值依次降低,分别为:单层0.45 J/cm2,2层0.34 J/cm2,3层0.23 J/cm2。激光强度超过阈值时,石墨烯薄膜电阻增大,载流子迁移率降低。通过光学显微镜观察发现局部区域破损,破损区域的拉曼光谱中1580 cm-1左右的G峰和2700 cm-1左右的2D峰高度比发生变化。实验结果表明1064 nm纳秒激光辐照石墨烯主要为剥离作用。Abstract: The mono-bi-and trilayer graphene samples were prepared by chemical vapor deposition method and transferred to substrate. Damage effect of the graphene under 1064 nm nanosecond laser irradiation was quantified by taking Hall Effect and Raman spectra measurements. The results show that, the laser induced damage threshold values of the mono-bi-and trilayer graphene samples decrease accordingly: mono layer, 0.45 J/cm2; bilayer, 0.34 J/cm2; 3 layer, 0.23 J/cm2. When the laser energy is higher than the threshold, the sheet resistance of graphene increases, and the carrier mobility decreases. Damaged area was observed by optical microscope after high energy laser irradiation. In the damaged area, the Raman intensity ratios of the G peak (1580 cm-1) to the 2D peak (2700 cm-1) decrease. The results demonstrate that the 1064 nm nanosecond laser irradiation can exfoliate the multilayer graphene without inducing structure defects.
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Key words:
- graphene /
- laser /
- Hall effect /
- Raman spectrum /
- laser processing
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