Review of neutron induced single event effects on semiconductor devices
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摘要: 回顾了中子单粒子研究的国内外发展情况，介绍了近几年西北核技术研究所在西安脉冲堆开展的低能中子单粒子效应研究进展。比较了稳态与脉冲工况下中子单粒子效应的异同性；分析了含有SRAM结构器件随着特征尺寸的减小，中子单粒子效应敏感性加剧的物理机制。分析认为目前中子单粒子效应已成为小尺寸大规模互补金属氧化物半导体器件的主要中子效应表现；中子辐射效应研究中，除了位移损伤效应以外还必需重视由中子电离造成的中子单粒子效应。Abstract: A review of neutron induced single event effects (SEE) on semiconductor devices is presented, with emphasis on research progress with Xian Pulsed Reactor in Northwest Institute of Nuclear Technology. Comparison of steady and pulsed neutron induced SEE is presented. The physical mechanism of increasing susceptibility of SRAM-based integrated circuits with feature size scaling down is analyzed. For CMOS LSI with sub-micron feature size, neutron induced SEE has become the dominant radiation damage mechanism under neutron irradiation. Future work should pay more attention to neutron induced SEE besides displacement damage effects.
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