Effect of inert gas on radicals during diamond film being deposited by HFCVD
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摘要: 发射光谱法是对等离子进行在线诊断的常用方法。在丙酮/H2、丙酮/H2/He和丙酮/H2/Ar三种体系中,对热丝化学气相沉积金刚石薄膜过程中的等离子体进行了在线测量。研究了不同体积分数的惰性气体对等离子体中各活性基团强度的影响,以及CH，H与C2的相对强度的比值、电子温度的大小随惰性气体体积分数的变化关系。结果表明,各基团的强度随着惰性气体体积分数的增加呈现上升趋势,且加入同体积分数的氩气比加入氦气的影响更大；CH，H与C2的相对强度比值、电子温度随着惰性气体体积分数的增加而呈现下降趋势,且在丙酮/H2/Ar体系中要比丙酮/H2/He体系中小。Abstract: The optical emission spectroscopy(OES) is an effective method for plasma diagnosing. In this article, OES was used to in situ measure the hot filament chemical vapor deposition(HFCVD) plasma of acetone/H2 system, acetone/H2/He system and acetone/H2/Ar system respectively. The intensity of radicals, the intensity ratios of CH, H to C2 and the value of electron temperature as a function of inert gas volume fraction were studied. The result shows that the spectrum intensities of radicals increase with the increasing of the inert gas volume fraction, and the influence of argon is much higher than that of helium. The intensity ratios of CH, H to C2 and the value of electron temperature decrease with the increasing concentration of the inert gas in the feed gas. The intensity ratio of CH/C2, H/C2 and the value of electron temperature are higher in the acetone/H2/He system than that in the acetone/H2/Ar system.
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