4H-SiC photoconductive switch with low on-state resistance
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摘要: 研制了以4H-SiC为基底材料的同面型光导开关,研究了磷离子注入对器件性能的影响。测试结果表明,采用磷离子注入能够有效降低电极处的体电阻,光导开关单位电极间隙的最小导通电阻为3.17 /mm。实验研究了偏置电压和光脉冲能量对导通电阻的影响,在偏置电压10 kV、光能量为30.5 mJ的条件下,器件的输出功率超过2.0 MW。结果表明,研制的开关具有输出波形稳定、抖动小、功率大等特点。Abstract: 4H-SiC photoconductive switches with a lateral geometry are fabricated. Phosphate ion implantation is adopted to decrease the resistance. The results show that phosphate ion implantation can effectively reduce the resistance nearing the electrode and the minimum unit of the electrode gap on-state resistance is 3.17 / mm. This experiment shows the bias voltage and optical pulse energy how to effect the on-state resistance. The power of the device is more than 2.0 MW when the bias voltage is 10 kV and the energy of light is 30.5 mJ. The characteristics of the switch output are stable, low jitter and high power. This is of importance to the application of silicon carbide photoconductive switch.
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