高功率盒形窗内次级电子倍增效应

张雪; 徐强; 王勇; 楚君; 王梦蛟; 段斌

doi:10.11884/HPLPB201628.023004

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高功率盒形窗内次级电子倍增效应

doi: 10.11884/HPLPB201628.023004

张雪^1,3,
徐强^2,3,
王勇²,
楚君¹,
王梦蛟¹,
段斌¹

1.
湘潭大学信息工程学院, 湖南湘潭 41 1 1 05;
2.
中国科学院电子学研究所高功率微波源与技术重点实验室, 北京 1 001 49;
3.
中国科学院大学, 北京 1 001 49

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- 被引次数: 0
出版历程
- 收稿日期: 2015-09-06
- 修回日期: 2015-11-20
- 刊出日期: 2016-02-15

Multipactor phenomenon of high-power pill-box window

1.
College of Information Technology,Xiangtan University,Xiangtan 411105,China;
2.
Key Laboratory of High Power Microwave Sources and Technologies,Institute of Electronics,Chinese Academy of Sciences,Beijing 100149,China;
3.
University of Chinese Academy of Sciences,Beijing 100149,China

摘要

摘要: 以S波段高功率盒型窗为对象，采用Monte Carlo模拟方法对盒型窗内的次级电子倍增效应进行研究，探索次级电子的倍增规律。模拟得到了盒型窗内TE11模和TM11模共同作用下，两种陶瓷窗片表面次级电子倍增活跃的区域随传输功率的变化特点。在低传输功率下，次级电子仅在未镀膜窗片表面被激励，并以双面倍增的方式在金属法兰与镀膜窗片相对应的区域增长；在较高的传输功率下，窗片表面的次级电子将以单面倍增的方式活跃在窗片表面与波导口相对的区域。传输功率的升高使得镀膜窗片表面的次级电子倍增活跃区域转移到矩形波导窄边对应的区域，并加剧了未镀膜窗片表面的局部倍增效应。
- 速调管 /
- 盒形窗 /
- 次级电子倍增效应 /
- 蒙特卡罗模拟
Abstract: Based on the S-band classical pill-box window, Monte Carlo (MC) numerical simulation was performed to study the multipactor regime. The behavior of the multipactor under multi-mode (TE11 mode and TM11 mode) electric field in the S-band classical pill-box window loaded with 2 distinct window disks was investigated. The characteristics of one-sided multipactor and two-sided multipactor in the pill-box window were analyzed. It was proved that the two-sided multipactor would be excited between the copper wall and the window disk under the effect of TM11 mode in the surface of un-coated window disk when low power was transmitting. In addition, the one-sided multipactor would be apparent in the center of window disk when high power was transmitting.
- klystron /
- pill-box window /
- multipactor /
- Monte Carlo simulation