Research of total ionizing dose effects in silicon bipolar devices and circuits
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摘要: 针对硅双极器件及其构成的双极集成电路有着如低剂量率辐照损伤增强效应等不同于其他类型电路的特殊的辐照响应问题, 分析了空间辐射电离总剂量环境及铝屏蔽作用, 双极晶体管及电路总剂量辐照损伤机理, 低剂量率辐照损伤增强效应、规律和电参数变化。通过选取几种典型的双极晶体管和电路进行地面辐照模拟试验和测试, 证明了双极器件及电路的关键参数受辐照影响较大, 特别是对低剂量率辐照损伤增强效应敏感, 低剂量率辐照损伤增强因子基本都大于1.5, 不同双极器件和电路的低剂量率辐照损伤增强效应有着明显的不同, 与器件类型、加工工艺(如氧化层厚度)等密切相关。
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关键词:
- 双极器件 /
- 总剂量辐照 /
- 低剂量率 /
- 低剂量率辐照损伤增强效应 /
- 增强因子
Abstract: As silicon bipolar devices and circuits have different radiation effects from other types of circuits, such as enhanced low dose rate sensitivity, this article analyzes the space radiation environment, Al shield effect, the total ionizing dose radiation damage mechanism and the principle, rule, and electrical parameters change by enhanced low dose rate radiation sensitivity of bipolar devices and circuits. The radiation experiment in lab with several typical bipolar devices and circuits indicates that the important parameters of the bipolar devices and circuits are greatly influenced by total ionizing dose radiation, especially by low dose rate radiation, with the enhancement factors of low dose rate radiation mostly more than 1.5.Different bipolar devices and circuits have different enhanced low dose rate sensitivity, which is mainly due to device types and manufacture process (such as oxidation layer thickness). -
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